利用高分辨X射线衍射技术计算铝镓氮外延膜的晶格参数

Study on Crystal Lattice Constant of AlxGa1-xN Epitaxial Film by High Resolution X-ray Diffraction Technique

中文关键词:  A1GaN,高分辨X射线衍射,晶格常数,测量偏差

英文关键词:A1GaN,high resolution x-ray diffraction,lattice constant,measurement error

中文摘要:

      利用高分辨X射线衍射（HRXRD）技术对在蓝宝石衬底上用金属有机化学气相沉积(MOCVD)方法生长的Al组分含量为0.63的AlGaN外延膜进行晶格参数的精确计算.通过对Al_0.63Ga_0.37N的对称晶面和非对称晶面进行ω/2θ扫描，以及对零点误差和晶面间距的修正，能够计算得到六方晶系Al_0.63Ga_0.37N外延膜的水平晶格常数a和垂直晶格常数c分别为0.313 01 nm和0.505 96 nm.通过对各种影响因素的分析和校正，可以得出二者的测量偏差分别为0.000 01 nm和0.000 02 nm.

英文摘要:

      An Al_xGa_1-xN film with a Al content of 0.63 was grown on the sapphire substrate by the metal-organic chemical vapor deposition. High resolution x-ray diffraction method can used to measure the crystal lattice constant of the Al_xGa_1-xN film. The lattice constant of the Al_xGa_1-xN film can be accurately determined by the ω/2θ scan of the symmetric crystal plane and asymmetric crystal plane and also by the correction of the zero error and distance of crystal planes. The result showed that the level lattice constant of Al_0.63Ga_0.37N is 0.505 96 nm,and the vertical lattice constant is 0.313 01 nm. Through the analysis and correction of various effects, the obtained measurement deviations are 0.000 1 nm and 0.000 2 nm,respectively.