PZT铁电薄膜底电极制备工艺的研究

Preparation of Bottom Electrode for PZT Ferroelectric Thin Films

中文关键词:  磁控溅射,PZT铁电薄膜,底电极,退火

英文关键词:magnetron sputtering,PZT,bottom electrode,annealing

中文摘要:

      利用磁控溅射方法在Si（001）基片上制备Ti/Pt底电极，其厚度大概分别为20、100 nm，其中Ti电极作为缓冲层，随后在上面溅射PZT铁电薄膜.研究了不同电极的制备工艺对电极形貌、取向以及对PZT铁电薄膜的制备带来的影响.结果表明，底电极的溅射温度以及退火温度对于底电极起着至关重要的作用，同时具有良好（111）取向的、致密性较好的底电极对于PZT铁电薄膜的生长具有重要的影响.

英文摘要:

      Ti/Pt bottom electrodes with thickness of about 20 nm and 100 nm have been synthesized on Si（001）substrates by using a magnetron sputtering method, the Ti electrode is used as the buffer, then PZT thin films are grown on the electrode. The relationship of the preparation technology of Pt/Ti electrode on the structure and property of the film has been discussed. The results show that spurttering temperature and annealing temperature are important to the bottom electrode, and also the compactability of the electrode has key influence on the growth of PZT thin films.