平面型Gunn器件低温SiO2和PSG的淀积

Deposition of Silicon Dioxide at Low Temperature in Plane Type Gunn Domain Avalanche Device

中文关键词:  低温淀积  SiO₂  畴雪崩器件  夹层结构

英文关键词:Deposit at low temperature  SiO₂  Domain avalanche device  Sandwich structure

中文摘要:

      采用“夹层结构”的方法制作平面型Gunn畴雪崩器件的n型GaAs外延材料,以及低温(420℃～450℃)淀积SiO₂的原理、工艺条件和可控硅电路。

英文摘要:

      This paper describes the principle of silicon dioxide deposition at low premature(420℃-450℃)on n-type GaAs epituial material in a plane type Gunn domain avalanche device. The sandwich structure of silicon dioxide as Well as deposition technology are given.We have also shown the circuit diagram of controllable silicon and some relaied important results.