利用X射线衍射考察不同缓冲层对AlGaN外延薄膜微结构的影响

Effect of Different Buffer Planes in AlGaN Epitaxial Thin Film on Structure and Properties Studied by XRD

中文关键词:  缓冲层/模版层  三轴晶高分辨X射线衍射(TAxRD)

英文关键词:AlGaN

中文摘要:

      为了获得高质量的高Al组分AlGaN外延材料,一般是在蓝宝石基片与外延层之间引入缓冲层或模板层(GaN、AlN或两者的交替周期超晶格)来提高AlGaN的外延质量,不同的缓冲层及结构对AlGaN的外延质量产生不同的影响.利用三轴晶高分辨X射线衍射(TAxRD)表征手段对2种生长结构下的AlGaN进行表征分析.

英文摘要:

      In order to fabricate high level AlGaN thin films with high Al component,the common method is to fabricate a buffer plane(GaN,AlN or superlattice with both of them) between the sapphire matrix and epitaxial thin film which can improve the properties of AlGaN.Different buffer planes and structure have different effects on properties of AlGaN epitaxial thin films.Two AlGaN thin films with two different growing structure were characterized by TAXRD.The rocking curve scan,reciprocal space mapping and SEM image ...