扩镓硅基GaN晶体膜质量的电镜分析

Electron Microscope Analysis of the Quality of GaN Films Deposited on Ga-diffused Si(111) Substrates

中文关键词:  Ga₂O₃薄膜  GaN晶体膜  射频磁控溅射  扩镓时间  氮化时间

英文关键词:Ga₂O₃  GaN  r.f. magnetron sputtering  Ga-diffused time  mitriding time

中文摘要:

      采用射频磁控溅射工艺在扩镓硅基上溅射Ga₂O₃薄膜,氮化反应组装GaN晶体膜,并对其生长条件进行研究.用扫描电镜(SEM)和X射线衍射(XRD)对样品进行结构、形貌分析.观测结果表明:采用此方法得到的在预沉积扩镓硅基上生长的GaN晶体膜,随着扩镓时间的增加,薄膜的晶化程度得到明显提高,而氮化时间对构成GaN薄膜的颗粒形态影响不大.

英文摘要:

      Gallium nitride thin films have been successfully grown on the Ga-diffused Si (111) substrates through nitriding Ga₂O₃ thin films deposited by r.f. magnetron sputtering and the growth condition was investigated. Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD) were employed to analyze the structure and surface morphology of the synthesized samples. The results reveal that the as-grown films are hexagonal GaN. Varying the Ga-diffused time and the mitriding time were found to have great effect on the crystal quality of GaN films, and the crystal quality and the thin film quality were improved with the increasing Ga-diffused time. And a small change have taken on the pellet shape of the GaN thin film with the increasing nitriding time.